GaN-on-Si Wafer Industry Research: the global market size is projected to reach USD 780 million by 2030

Gallium Nitride on Silicon wafers are used for both Power and 5F/RF application, D-mode GaN-on-Si HEMT & E-mode GaN-on-Si HEMT, etc.

Currently the key size is 6 inch GaN Si wafer, and the 8 inch GaN Si wafer will grow faster.

According to the new market research report “GaN-on-Si Wafer - Global Market Share and Ranking, Overall Sales and Demand Forecast 2024-2030”, published by QYResearch, the global GaN-on-Si Wafer market size is projected to reach USD 780 million by 2030, at a CAGR of 35.7% during the forecast period.

• Global GaN-on-Si Wafer MarketSize(US$ Million), 2019-2030

Source: QYResearch, "GaN-on-Si Wafer - Global Market Share and Ranking, Overall Sales and Demand Forecast 2024-2030”

• Global GaN-on-Si Wafer Top15Players Ranking and Market Share (Ranking is based on the revenue of 2023, continually updated)

Source: QYResearch, "GaN-on-Si Wafer - Global Market Share and Ranking, Overall Sales and Demand Forecast 2024-2030”

According to QYResearch Top Players Research Center, the global key manufacturers of GaN-on-Si Wafer include Innoscience, NTT Advanced Technology (NTT-AT), DOWA Electronics Materials, Enkris Semiconductor Inc, IQE, Soitec (EpiGaN), China Resources Microelectronics Limited, Sumitomo Electric Device Innovations (SEDI) (SCIOCS), Transphorm Inc., Epistar Corp., etc. In 2023, the global top five players had a share approximately 69.0% in terms of revenue.

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