Gallium nitride (GaN), a semiconductor material with a wide band gap, is an advanced technology and provides improved performance characteristics in comparison with other semiconductor devices such as gallium arsenide (GaAs) and silicon (Si). Due to resistivity to high temperatures, high breakdown voltage, low power consumption, high electron mobility, and better thermal stability. These devices are substantially utilized in defense, automotive, communication technology and information, aerospace, and power distribution systems.The market was estimated at US$481.8 million in 2014, is expanding at a 15.1% CAGR from 2015 to 2021, and will reach US$1,315.0 million by 2021.
Opto Electronics Take up Dominant 78% Share in Global Market
On the basis of types, the
global GaN industrial devices market is segregated into two segments: opto electronics and power devices. In terms of revenue, opto electronics represented the biggest share in the market in 2014, occupying 78.0% of the overall market. The broad range of implementation of these devices in light-emitting as well as laser diodes is primarily driving the market.
In terms of application, the market for global GaN industrial devices can be divided into three segments: light emitting diodes (LEDs), power devices, and radio frequency (RF). The LED segment was the biggest contributor to the GaN industrial devices market, on the basis of both volume and value in 2014, representing a market share of 82.5% and 68.0% by the two criteria, respectively. This is due to the comprehensive utilization of LED devices that are GaN-based in vehicle lamps, liquid crystal displays, and traffic signal lamps. Additionally, there have been two key developments in GaN-based LED technology: Development of GaN-based devices on foreign substrates and bulk invention of GaN substrate based LEDs.
GaN Industrial Devices Market: Drivers and Trends
Increasing demand from the defense sector for enhanced battlefield performance has subsequently sped up the demand for GaN industrial devices. The key application of GaN in armed forces is its utilization in HEMT (high electron mobility transistor), which is a necessity in high-frequency operations.Another factor stimulating the growth of the worldwide GaN industrial devices market is the increasing adoption of sophisticated technology and large-scale production of GaN. Due to swift improvement in GaN technology, a large number of companies are bringing in new innovative products, which are are budget-friendly and have enhanced performance and design.
On the basis of geography, the GaN industrial devices market has been segmented into four major regions: North America, Europe, Asia Pacific, and Rest of the World (RoW). North America held the largest share in 2014, representing 31.1% of the overall market. On the basis of revenue, Europe acquired the second biggest market share and represented 28.9% of the market in 2014.Key manufacturers across the four regional segments of the market include GaN Systems Inc., Fujitsu Limited, Freescale Semiconductor Inc., International Rectifier, Efficient Power Conversion Corporation, NXP Semiconductors N.V., Renesas Electronics Corporation, Texas Instruments Inc., Toshiba Corporation, and International Quantum Epitaxy plc.
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